Wide-bandgap semiconductor materials: For their full bloom
نویسندگان
چکیده
منابع مشابه
Advances in wide bandgap materials for semiconductor spintronics
Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission. The relatively new field of semiconductor spintronics seeks, in addition, to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. The ability to con...
متن کاملUltrafast Spectroscopy of Wide Bandgap Semiconductor Nanostructures
Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue lightemitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of highly efficient white LEDs has passed successful developments. A serious physical issue still remained, which prevents their use for high pow...
متن کاملWide Bandgap Semiconductor Devices and MMICs: A DARPA Perspective
This paper reports on the recent successful completion of Phase I of DARPA’s Wide Bandgap Semiconductor Technology Initiative (WBGSTI). Phase I results are given for semi-insulating substrates and epitaxial growth, and a description and expectations for the upcoming Phases II and III are also provided. INTRODUCTION Wide bandgap devices and MMICs with high power density, high power added efficie...
متن کاملWide Bandgap Semiconductor Substrates: Current Status and Future Trends
Wide bandgap semiconductors have expanded the scope of device applications beyond those of silicon and gallium arsenide. Exploitation of wide bandgap semiconductors holds promise for revolutionary improvements in the cost, size, weight and performance of a broad range of military and commercial microelectronic and opto-electronic systems. The inherent material properties of silicon carbide, gal...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2015
ISSN: 0021-4922,1347-4065
DOI: 10.7567/jjap.54.030101